PlasmaPro 100 tool offers selective and high precision processing. Separate RF and ICP generators provide separate control over ion energy and ion density, enabling high process flexibility.

Technical specification

• Vacuum loadlock for high throughput
• Compatible with all wafer sizes up to 200 mm
• RF 13,56 MHz and ICP 2 MHz plasma generator
• Process temperature range: -30°C – 80°C
• In-situ end point detection (laser inreferometry)
• Wafer clamping and helium cooling, providing excellent temperature control
• Process gases: Cl2, BCl3, Ar, O2

Application

• Etching of metals, dielectrics, semiconductors